کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9837989 1525287 2005 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Phenomenological description of coercive field decrease in ferroelectric semiconductors with charged inhomogeneities
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Phenomenological description of coercive field decrease in ferroelectric semiconductors with charged inhomogeneities
چکیده انگلیسی
We have proposed the phenomenological description of polarization switching peculiarities in ferroelectric semiconductors with charged defects and prevailing extrinsic conductivity. We have exactly modified the Landau-Ginzburg approach and shown that the macroscopic state of the aforementioned inhomogeneous system can be described by three coupled equations for three order parameters. The coercive field values well below the thermodynamic one have been obtained in the framework of our model. This result agrees much better with experiments for bulk samples than predictions of the classical Landau-Ginzburg theory.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 355, Issues 1–4, 31 January 2005, Pages 236-243
نویسندگان
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