Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory
Keywords: 61.43 دقیقه; 61.43.Dq; 68.55.In; 81.30.Hd; 84.37.+q; Si doping; Ge2Sb2Te5; Activation energy; Resistivity; Dynamic resistance; Phase-change memory;