کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9586126 | 1505937 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Light-emitting Si films formed by neutral cluster deposition in a thin O2 gas
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have fabricated the light-emitting Si-rich and oxygen-rich amorphous SiO2 (a-SiO2) films using the neutral cluster deposition (NCD) method without and with oxygen gas admitted, respectively, and demonstrate for the first time that these films show a photoluminescent feature. The Si thin films were observed by atomic force microscopy and high-resolution transmission electron microscopy, and analyzed by means of X-ray photoelectron spectroscopy, photoluminescence (PL) and FTIR-attenuated total reflection measurements. All of the PL spectra show mountainous distribution with a peak around 620Â nm. It is found that the increase in the oxygen termination in the a-SiO2 films evidently makes the PL intensity increase. It is demonstrated that NCD technique is one of the hopeful methods to fabricate light-emitting Si thin films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 113, Issues 3â4, June 2005, Pages 279-284
Journal: Journal of Luminescence - Volume 113, Issues 3â4, June 2005, Pages 279-284
نویسندگان
Y. Honda, M. Takei, H. Ohno, S. Shida, K. Goda,