
																
																	Study of 3D-growth conditions for selective area MOVPE of high aspect ratio GaN fins with non-polar vertical sidewalls
																
																
																
															Keywords: A1 مورفولوژی کریستال; A1. Crystal morphology; A3. Metalorganic vapor phase epitaxy; B.1 Gallium compounds; B.1 Nitrides; B.3 Light emitting diodes;