
Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth
Keywords: A3 رسوبات بخار شیمیایی فلزات; A1. Wet etching; A1. Semi-polar (11-22) GaN; A3. Molecular beam epitaxy; A3. Metalorganic chemical vapour deposition; B1. AlGaN/GaN; B3. Vertical Heterostructure Field Effect Transisto (VHFET);