کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10707520 | 1023660 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dimethylzinc adduct chemistry revisited: MOCVD of vertically aligned ZnO nanowires using the dimethylzinc 1,4-dioxane adduct
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
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چکیده انگلیسی
The dimethylzinc adduct [Me2Zn(1,4-dioxane)] has been used for the growth of vertically aligned ZnO nanowires by liquid injection MOCVD. The ZnO nanowires were deposited at temperatures of 450 and 500 °C on Si(1 1 1) and F-doped SnO2/glass substrates and XRD data showed that the ZnO nanowires were deposited in the wurtzitic phase. Room temperature PL data for the nanowires showed that they are of high crystalline quality with intense near band-edge emission at 3.28 eV and a very low intensity of defect-related green luminescence at 2.42 eV. Single crystal XRD data showed that the [Me2Zn(1,4-dioxane)] adduct is polymeric with repeating [Me2Zn] units bridged by monodentate 1,4-dioxane ligands.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 315, Issue 1, 15 January 2011, Pages 292-296
Journal: Journal of Crystal Growth - Volume 315, Issue 1, 15 January 2011, Pages 292-296
نویسندگان
R. Kanjolia, A.C. Jones, S. Ashraf, J. Bacsa, K. Black, P.R. Chalker, P. Beahan, S. Hindley, R. Odedra, P.A. Williams, P.N. Heys,