Keywords: B1 سفالگری; A1. Characterization; A1. Interfaces; A1. Heat transfer; A1. Radiation; A2. Laser heated pedestal growth; B1. Sapphire;
مقالات ISI B1 سفالگری (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
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Keywords: B1 سفالگری; A1. Single crystal growth; Edge-defined film-fed growth; Stepanov method; B1. Sapphire; B3. Optical fiber devices;
Keywords: B1 سفالگری; A1. Substrate; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B1. Sapphire; B3. Light emitting diodes;
Keywords: B1 سفالگری; A1. Interfaces; A1. Computer simulation; A2. Single crystal growth; B1. Sapphire;
Keywords: B1 سفالگری; A1. Stresses; A1. Defects; A1. X-ray topography; A2. Stepanov method; A2. Edge defined film fed growth; B1. Sapphire;
Keywords: B1 سفالگری; A1. Computer simulation; Fluid flows; Heat transfer; A2. Edge defined fed film growth; B1. Sapphire; B3. Optics;
Keywords: B1 سفالگری; A1. Computer simulation; A1. Convection; A2. Edge defined film fed growth; B1. Sapphire;
Keywords: B1 سفالگری; A1. Heat transfer; A1. Computer simulation; A2. Single crystal growth; B1. Sapphire;
Keywords: B1 سفالگری; A1. Computer simulation; A1. Convection; A1. Single crystal growth; A1. Temperature gradient; A2. Kyropoulos method; B1. Sapphire;
Keywords: B1 سفالگری; A1. Computer simulation; A2. Single crystal growth; A2. Bridgman technique; A2. Growth from melt; B1. Sapphire;
Tuning the sapphire EFG process to the growth of Al2O3/YAG/ZrO2:Y eutectic
Keywords: B1 سفالگری; A1. Eutectics; A2. EFG; B1. Oxydes; B1. Sapphire; B1. Yttrium compounds; Capillarity; Working point;
Solid-phase epitaxy of a cavity-shaped amorphous alumina nanomembrane structure on a sapphire substrate
Keywords: B1 سفالگری; A1. Recrystallization; A1. Nanostructures; A3. Solid phase epitaxy; B1. Sapphire;
Effect of power history on the shape and the thermal stress of a large sapphire crystal during the Kyropoulos process
Keywords: B1 سفالگری; A1. Computer simulation; A1. Heat transfer; A1. Stresses; A2. Kyropoulos method; A2. Single crystal growth; B1. Sapphire;
Comparison of thermal stress computations in Czochralski and Kyropoulos growth of sapphire crystals
Keywords: B1 سفالگری; A1. Stresses; A1. Computer simulation; A2. Kyropoulos method; B1. Sapphire;
Selective area growth of N-polar GaN nanorods by plasma-assisted MBE on micro-cone-patterned c-sapphire substrates
Keywords: B1 سفالگری; B1. Nitrides; A3. Molecular beam epitaxy; A3. Selective epitaxy; A1. Substrates; B1. Sapphire; A1. Nanostructures;
CeO2 nanocrystals and solid-phase heteroepitaxy of CeAlO3 interlayer on Al2O3(0Â 0Â 0Â 1) substrate
Keywords: B1 سفالگری; A1. Interface; A2. Hydrothermal crystal growth; A3. Solid phase epitaxy; B1. Nanomaterials; B1. Rare earth compounds; B1. Sapphire;
Crystal front shape control by use of an additional heater in a Czochralski sapphire single crystal growth system
Keywords: B1 سفالگری; A2. Czochralski method; B1. Sapphire; A2. Growth from melt; A2. Single crystal growth;
Orientational control of CeO2 films on sapphire substrates grown by magnetron sputtering
Keywords: B1 سفالگری; A1. Atomic force microscopy; A1. X-ray diffraction; A3. Selective epitaxy; B1. Oxides; B1. Sapphire;
World׳s largest sapphire for many applications
Keywords: B1 سفالگری; A1. Directional solidification; A2. Growth from melt; A2. Single crystal growth; B1. Sapphire; B3. Light emitting diodes; CHES;
Temperature distribution across the growth zone of sapphire (Al2O3) and yttrium–aluminum garnet (YAG) single crystal fibers
Keywords: B1 سفالگری; A1. Characterization; A2. Laser heated pedestal growth; B1. Sapphire; B1. Yttrium compounds
Comparison between numerical modeling and experimental measurements of the interface shape in Kyropoulos growth of Ti-doped sapphire crystals
Keywords: B1 سفالگری; A1. Computer simulation; A1. Convection; A2. Single crystal growth; B1. Sapphire
Control of domain orientation during the MBE growth of ZnTe on a-plane sapphire
Keywords: B1 سفالگری; A1. X-ray diffraction; A3. Molecular beam epitaxy; B1. Zinc compounds; B1. Sapphire; B2. Semiconducting II-VI materials; B3. Heterojunction semiconductor devices;
Vertical Bridgman growth of sapphire crystals, with thin-neck formation process
Keywords: B1 سفالگری; A2. Bridgman technique; A2. Growth from melt; A2. Seed crystals; A2. Single crystal growth; B1. Sapphire; B3. Light emitting diodes
Morphology and formation mechanism of metallic inclusions in VB-grown sapphire crystals
Keywords: B1 سفالگری; A1. Defect; A1. Inclusion; A2. Bridgman technique; A2. Growth from melt; B1. Sapphire; B3. Light emitting diodes
Characterization of low angle grain boundary in large sapphire crystal grown by the Kyropoulos method
Keywords: B1 سفالگری; A1. Etching; A1. X-ray topography; A2. Kyropoulos method; B1. Sapphire;
Fabrication of free-standing GaN by using thermal decomposition of GaN
Keywords: B1 سفالگری; A1. Interfaces; A3. Hydride vapor phase epitaxy; B1. Gallium compounds; B1. Nitrides; B1. Sapphire
Hydride vapor phase epitaxy of high quality {101̄3̄} semipolar GaN on m-plane sapphire coated with self-assembled SiO2 nanospheres
Keywords: B1 سفالگری; A3. Hydride vapor phase epitaxy; B1. Sapphire; B1. Semipolar GaN; B2. SiO2 nanospheres
Thermal and stress distributions in larger sapphire crystals during the cooling process in a Kyropoulos furnace
Keywords: B1 سفالگری; A1. Stresses; A1. Computer simulation; A1. Heat transfer; A2. Single crystal growth; A2. Kyropoulos method; B1. Sapphire
The influence of crucible and crystal rotation on the sapphire single crystal growth interface shape in a resistance heated Czochralski system
Keywords: B1 سفالگری; A1. Computer simulation; A2. Czochralski method; A2. Single crystal growth; B1. Sapphire;
3D numerical investigation and improvement to the design of the thermal field before seeding in a multi-die edge-defined film-fed growth system for sapphire ribbon crystals
Keywords: B1 سفالگری; A1. Computer simulation; A1. Heat transfer; A2. Edge defined film fed growth; A2. Growth from melt; B1. Sapphire;
Influence of temperature-dependent thermophysical properties of sapphire on the modeling of Kyropoulos cooling process
Keywords: B1 سفالگری; A1.Thermophysical properties; A1. Numerical simulation; A2. Kyropoulos; B1. Sapphire;
Vertical Bridgman growth of sapphire—Seed crystal shapes and seeding characteristics
Keywords: B1 سفالگری; A2. Bridgman technique; A2. Growth from melt; A2. Seed crystals; A2. Single crystal growth; B1. Sapphire; B3. Light emitting diodes
Growth of thick GaN layers on laser-processed sapphire substrate by hydride vapor phase epitaxy
Keywords: B1 سفالگری; A1. Defects; A3. Hydride vapor phase epitaxy; B1. Sapphire; B2. Semiconductor III-V materials; A1. Laser process; A1. Cracks;
Latest developments of large-diameter c-axis sapphire grown by CHES method
Keywords: B1 سفالگری; A2. CHES; A2. Gradient freeze technique; A2. Industrial crystallization; A2. Single crystal growth; B1. Sapphire; B3. Light emitting diodes;
Growth of AlN by pulsed and conventional MOVPE
Keywords: B1 سفالگری; A1. High resolution X-ray diffraction; A3. Organometallic vapor phase epitaxy; B1. Nitrides; B1. Sapphire; B2. Semiconducting III-V materials;
Ab initio-based approach to elemental nitridation process of α-Al2O3
Keywords: B1 سفالگری; A1. Computer simulation; A1. Nanostructures; A1. Substrates; A1. Surface structure; B1. Nitrides; B1. Sapphire;
Growth and characterization of Fe:Ti:Al2O3 single crystal by floating zone method
Keywords: B1 سفالگری; A1. Raman; A1. X-ray diffraction; A2. Floating zone technique; A2. Single crystal growth; B1. Sapphire
Demonstration of crack-free c-axis sapphire crystal growth using the vertical Bridgman method
Keywords: B1 سفالگری; A1. Stresses; A2. Bridgman technique; A2. Growth from melt; A2. Single crystal growth; B1. Sapphire
Two-step lateral growth of GaN for improved emission from blue light-emitting diodes
Keywords: B1 سفالگری; A3. Metalorganic chemical vapor deposition; A3. Selective epitaxy; B1. Nitrides; B1. Sapphire; B2. Dielectric materials; B3. Light emitting diodes
Simulation of heat transfer and convection during sapphire crystal growth in a modified heat exchanger method
Keywords: B1 سفالگری; A1. Computer simulation; A1. Convection; A1. Heat transfer; A2. Growth from melt; B1. Sapphire
To investigate interface shape and thermal stress during sapphire single crystal growth by the Cz method
Keywords: B1 سفالگری; A1. Computer simulation; A1. Interface; A1. Stresses; A2. Czochralski method; B1. Sapphire
Influence of source gas supply sequence on hydride vapor phase epitaxy of AlN on (0001) sapphire substrates
Keywords: B1 سفالگری; A1. Characterization; A3. Hydride vapor phase epitaxy; B1. Nitrides; B1. Sapphire; B2. Semiconducting aluminum compounds
Formation of AlN on sapphire surfaces by high-temperature heating in a mixed flow of H2 and N2
Keywords: B1 سفالگری; A1. Surface processes; A3. Chemical vapor deposition processes; B1. Nitrides; B1. Sapphire; B2. Semiconducting aluminum compounds;
Strong biaxial texture and polymorph nature in TiO2 thin film formed by ex-situ annealing on c-plane Al2O3 surface
Keywords: B1 سفالگری; A1. Crystal structure; A1. X-ray diffraction; B1. Titanium dioxide; B1. Sapphire;
Analysis of the growth conditions of long single crystalline basal-plane-faceted sapphire ribbons by the Stepanov/EFG technique
Keywords: B1 سفالگری; A1. Defects; A2. Edge defined film fed growth; A2. Growth from melt; A2. Stepanov method; B1. Sapphire
Effect of power arrangement on the crystal shape during the Kyropoulos sapphire crystal growth process
Keywords: B1 سفالگری; A1. Numerical; A2. Crystal growth; B1. Sapphire; B2. Kyropoulos
Crystal orientation of β-Ga2O3 thin films formed on c-plane and a-plane sapphire substrate
Keywords: B1 سفالگری; A1. Crystal structure; A1. X-ray diffraction; B1. Gallium compounds; B1. Oxides; B1. Sapphire; B2. Semiconducting gallium compounds
Control of initial bow of sapphire substrates for III-nitride epitaxy by internally focused laser processing
Keywords: B1 سفالگری; A1. Substrates; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B1. Sapphire
Modern trends in crystal growth and new applications of sapphire
Keywords: B1 سفالگری; A2. Growth from melt; B1. Sapphire; B2. Luminescent materials; B3. Optical data storage medium; B3. Radiation detectors;
The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD
Keywords: B1 سفالگری; A3. Metal organic chemical vapor deposition; B1. Sapphire; B1. Zinc compounds; B2. Semiconducting II-VI materials;