Keywords: B1 سیلیکون نیمه رسانا; A1. Growth models; A2. Czochralski method; A2. Growth from melt; B1. Semiconducting silicon
مقالات ISI B1 سیلیکون نیمه رسانا (ترجمه نشده)
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Concept and method to create a distinct low-temperature region in a Si melt for growth of a Si single ingot with a large diameter ratio using the noncontact crucible method
Keywords: B1 سیلیکون نیمه رسانا; A2. Single crystal growth; A2. Growth from melt; A2. Natural crystal growth; A2. Seed growth; B1. Semiconducting silicon; B3. Solar cells;
Efficient computation of population distribution of microdefects at any location in growing Czochralski silicon single crystals
Keywords: B1 سیلیکون نیمه رسانا; A1. Defects; A1. Point defects; A1. Size distribution; A2. Czochralski method; B1. Nucleation; B1. Semiconducting silicon; Microdefects;
Anisotropic study of thermal stresses induced by diameter fluctuation during Czochralski silicon single crystal growth
Keywords: B1 سیلیکون نیمه رسانا; A1. Computer simulation; A1. Stresses; A2. Czochralski method; A2. Single crystal growth; B1. Semiconducting silicon
High-speed growth of Si single bulk crystals by expanding low-temperature region in Si melt using noncontact crucible method
Keywords: B1 سیلیکون نیمه رسانا; A1. Crystal structure; A2. Growth from melt; A2. Natural crystal growth; A2. Seed growth; B1. Semiconducting silicon; B3. Solar cells
Modeling and simulation of silicon epitaxial growth in Siemens CVD reactor
Keywords: B1 سیلیکون نیمه رسانا; A1. Computer simulations; A1. Growth models; A1. Fluid flows; A3. Chemical vapor deposition processes; B1. Semiconducting silicon;
Impact of diameter fluctuations on thermal stresses during Czochralski silicon growth
Keywords: B1 سیلیکون نیمه رسانا; A1. Computer simulation; A1. Stresses; A2. Czochralski method; A2. Single crystal growth; B1. Semiconducting silicon
Global simulation of the Czochralski silicon crystal growth in ANSYS FLUENT
Keywords: B1 سیلیکون نیمه رسانا; A1. Computer simulation; A1. Turbulent convection; A2. Czochralski method; B1. Semiconducting Silicon
Rayleigh–Bénard instability of Czochralski configuration in a transverse magnetic field
Keywords: B1 سیلیکون نیمه رسانا; A1. Computer simulation; A1. Fluid flows; A2. Magnetic field assisted Czochralski method; B1. Semiconducting silicon
Defects in Ge epitaxy in trench patterned SiO2 on Si and Ge substrates
Keywords: B1 سیلیکون نیمه رسانا; A1. Planar defects; A1. Stresses; A3. Epitaxial lateral overgrowth; A3. Selective growth; B1. Semiconducting germanium; B1. Semiconducting silicon;
Crystallization of sputtered amorphous silicon induced by silver–copper alloy with high crystalline volumeratio
Keywords: B1 سیلیکون نیمه رسانا; A1. Recrystallization; A3. Alloy-induced crystallization; A3. Magnetron sputtering; B1. Polycrystalline silicon; B1. Semiconducting silicon
Formation of parallel (1 1 1) twin boundaries in silicon growth from the melt explained by molecular dynamics simulations
Keywords: B1 سیلیکون نیمه رسانا; A1. Twin formation; A1. Computer simulation; A2. Growth from melt; B1. Semiconducting silicon
Growth mechanism of nanocrystalline silicon at the phase transition and its application in thin film solar cells
Keywords: B1 سیلیکون نیمه رسانا; A1. Crystal structures; A1. Phase equilibria; A2. Seed crystals; A3. Chemical vapor deposition processed; A3. Solar cells; B1. Nanomaterials; B1. Semiconducting silicon
Crystallization of amorphous silicon thin films using nanoenergetic intermolecular materials with buffer layers
Keywords: B1 سیلیکون نیمه رسانا; 61.43.Dq; 64.70.Nd; 64.70.dg; 65.80.+nA1. Heat transfer; A1. Industrial crystallization; A1. Recrystallization; A1. Solidification; B1. Nanomaterials; B1. Oxides; B1. Semiconducting silicon
Control of grain position in Ni-mediated crystallization of amorphous silicon
Keywords: B1 سیلیکون نیمه رسانا; 61.50.−f; 64.60.−i; 64.60.Qb; 66.30.−h; 68.37.Lp; 68.55.−aA1. Recrystallization; A3. Metal-induced crystallization; A3. Sold phase epitaxy; B1. Polycrystalline silicon; B1. Semiconducting silicon; B3. Field effect transitors; B3. Solar cells