کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1793518 1023677 2010 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Formation of parallel (1 1 1) twin boundaries in silicon growth from the melt explained by molecular dynamics simulations
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Formation of parallel (1 1 1) twin boundaries in silicon growth from the melt explained by molecular dynamics simulations
چکیده انگلیسی

Twin formation in silicon growth from the melt is examined by molecular dynamics (MD) simulations. For a moderate undercooling of 25 K, we find that twins do not nucleate on (1 1 1) microfacets in the perfect crystal, but exclusively occur in the vicinity of grain boundaries. Only at an undercooling of 150 K, we observe the formation of metastable twin bounded loops with incoherent interfaces to the matrix consisting of coherency and anticoherency dislocations. In conclusion, the nucleation of stable twins in silicon growth requires the presence of a grain boundary or more general of a three-phase boundary, but is unlikely to occur on ideal (1 1 1) facets because of the excess energy of the interfacial area between matrix and twinned crystal.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 312, Issue 8, 1 April 2010, Pages 1411–1415
نویسندگان
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