کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1793193 1023668 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Crystallization of sputtered amorphous silicon induced by silver–copper alloy with high crystalline volumeratio
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Crystallization of sputtered amorphous silicon induced by silver–copper alloy with high crystalline volumeratio
چکیده انگلیسی

Silver–copper alloy-induced crystallization of sputtered a-Si has been studied. In this alloy, Cu acts as a catalyst to accelerate the crystallization, while Ag acts as a new kind of buffer layer, different from Al2O3 and Si3N4, to obtain well-crystallized poly-Si films with short annealing time and free of post-treatment for ohmic contact. When the Cu content is limited to below 30%, Ag can effectively slow down the diffusion of Cu into Si and decrease the Cu–silicide nuclei density to improve the crystalline volume ratio from 80% to over 90%. A 1:4 ratio of Cu to Ag yields the best result. The crystalline volume ratio and Hall mobility reach nearly 100% and 29.4 cm2/V s, respectively. This high quality poly-Si film demonstrates a promising application in solarcells.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 312, Issue 24, 1 December 2010, Pages 3599–3602
نویسندگان
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