Keywords: باند باند تونل زدن; Dual material gate; DMG-GNRFET; Current ratio; Band to band tunneling; Edge roughness
مقالات ISI باند باند تونل زدن (ترجمه نشده)
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Keywords: باند باند تونل زدن; Graphene Nanoribbon Field Effect Transistor (GNRFET); Ambipolarity; Band to Band Tunneling; Drain Induced Barrier Lowering (DIBL); Non Equilibrium Green's Function (NEGF); Short Channel Effects; Uniaxial Tensile Strain;
Keywords: باند باند تونل زدن; NEGF; Graphene nanoribbon; Band to band tunneling; Field effect transistor;
Study of metal strip insertion and its optimization in doping less TFET
Keywords: باند باند تونل زدن; Ambipolar conduction; Work function engineering; Metal strip; Gate to drain capacitance; Band to band tunneling;
Performance improvement of doped TFET by using plasma formation concept
Keywords: باند باند تونل زدن; Ambipolar conduction; Band to band tunneling; Material solubility; Surface plasma formation; Threshold voltage;
Investigation of gate material engineering in junctionless TFET to overcome the trade-off between ambipolarity and RF/linearity metrics
Keywords: باند باند تونل زدن; Band to band tunneling; Control gate; Charge plasma; Polarity gate; Work-function;
A new design approach for enhancement of DC/RF performance with improved ambipolar conduction of dopingless TFET
Keywords: باند باند تونل زدن; Ambipolarity; Band to band tunneling; Gate underlapping; Metal angle; Subthreshold swing;
Comparative investigation of novel hetero gate dielectric and drain engineered charge plasma TFET for improved DC and RF performance
Keywords: باند باند تونل زدن; Charge plasma; Band to band tunneling; Ambipolar conduction; Work function engineering; Sub-threshold swing; Gate to drain capacitance;
Negative differential resistance in BN co-doped coaxial carbon nanotube field effect transistor
Keywords: باند باند تونل زدن; Coaxial CNTFET; Negative differential resistance; Non-equilibrium Green's function; BN co-doping; Band to band tunneling;
DC characteristics and analog/RF performance of novel polarity control GaAs-Ge based tunnel field effect transistor
Keywords: باند باند تونل زدن; Polarity bias; Band to band tunneling; Hetero tunnel field effect transistor
Impactful study of dual work function, underlap and hetero gate dielectric on TFET with different drain doping profile for high frequency performance estimation and optimization
Keywords: باند باند تونل زدن; Band to band tunneling; Dual material gate; Source pocket; Gate underlap; Hetero gate dielectric
Revisited approach for the characterization of Gate Induced Drain Leakage
Keywords: باند باند تونل زدن; Gate Induced Drain Leakage; Band to Band Tunneling; Band to Trap Tunneling; Fully depleted SOI MOSFET; Rapid Thermal Annealing; Solid Phase Epitaxial Regrowth
Drive current enhancement in p-tunnel FETs by optimization of the process conditions
Keywords: باند باند تونل زدن; Tunnel FET; Band to band tunneling; Oxide thickness; Doping concentration; Anneal;
Simulation of carbon nanotube FETs with linear doping profile near the source and drain contacts
Keywords: باند باند تونل زدن; Carbon nanotube; Ambipolarity; Band to band tunneling; Doping profile