کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7940277 | 1513192 | 2017 | 21 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of gate material engineering in junctionless TFET to overcome the trade-off between ambipolarity and RF/linearity metrics
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this work, we investigate for the first time dual material control gate junctionless tunnel-field effect transistor (DMCG-JLTFET) to improve the metrics in terms of DC, analog/RF parameters, and linearity performance. In this regard, we have considered N-type heavily doped silicon and formation of P+ source and intrinsic region beneath gate are performed by work-function engineering (dual material) concept with the deposition of metal electrodes over the silicon body, while, the drain region and the gap between source and channel remains with its original N+ doping. This forms the P+-N+-I-N+ gated structure similar to pocket doped TFET and prevents the device from random dopant fluctuations (RDFs). The gate electrode used to form the intrinsic region is partitioned into three parts namely auxiliary gate (M1), control gate (M2), and tunnel gate (M3) with work-functions ÏM1, ÏM2 and ÏM3, respectively where (ÏM1Â =Â ÏM3Â <Â ÏM2). Appropriate work-functions for the gate electrodes (M1, M2 and M3) in DMCG-JLTFET are used to address the trade-off between the ambipolarity and RF/linearity parameters. It provides superior results in terms analog/RF and linearity performance as compared to other possible combinations.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 109, September 2017, Pages 307-315
Journal: Superlattices and Microstructures - Volume 109, September 2017, Pages 307-315
نویسندگان
Anju Anju, Sukeshni Tirkey, Kaushal Nigam, Sunil Pandey, Dheeraj Sharma, Pravin Kondekar,