How crucial is back gate misalignment/oversize in double gate MOSFETs for ultra-low-voltage analog/rf applications?
Keywords: فرکانس قطع; Ultra-low-voltage analog/rf design; Double gate MOSFETs; Misaligned/oversize back gate; Gate-underlap architecture; Cut-off frequency; Intrinsic voltage gain; Transconductance-to-current ratio; Early voltage