
V-shaped metal–oxide–semiconductor transistor probe with nano tip for surface electric properties
Keywords: باریکه یونی متمرکز یا بیم; 85.85.+j; 07.79.Lh; 68.37.Ps; 85.30.TvScanning probe microscopy; Metal–oxide–semiconductor transistor; V-shaped cantilever; Focused ion beam; Parallel beam approximation