Keywords: نشت جریان دروازه; Poly-Si gate; Schottky gate; Gate leakage current; Reverse-bias stress; GaN HEMT
مقالات ISI نشت جریان دروازه (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
Analytical models for the 2DEG concentration and gate leakage current in AlGaN/GaN HEMTs
Keywords: نشت جریان دروازه; 2DEG; AlGaN/GaN HEMT; DoS (Density of States); Gate leakage current; Interface traps; Thermionic emission; Trap-Assisted Tunneling (TAT);
Accurate modeling of gate tunneling currents in Metal-Insulator-Semiconductor capacitors based on ultra-thin atomic-layer deposited Al2O3 and post-metallization annealing
Keywords: نشت جریان دروازه; Aluminum oxide; Atomic layer deposition; Gate leakage current; Conduction mechanism;
Design of a novel double doping polysilicon gate MOSFET
Keywords: نشت جریان دروازه; p+ buried layer; Thicker D-gate oxide film; Off-state current; Gate leakage current; DIBL
Improved modeling on the RF behavior of InAs/AlSb HEMTs
Keywords: نشت جریان دروازه; InAs/AlSb HEMTs; Small-signal equivalent circuit model; Impact ionization; Gate leakage current
Analytical modeling of the gate tunneling leakage for the determination of adequate high-k dielectrics in double-gate SOI MOSFETs at the 22 nm node
Keywords: نشت جریان دروازه; Compact analytical model; High-k dielectrics; Gate leakage current; Direct tunneling
Self-aligned ALD AlOx T-gate insulator for gate leakage current suppression in SiNx-passivated AlGaN/GaN HEMTs
Keywords: نشت جریان دروازه; Gate leakage current; Breakdown; Passivation; Insulated gate; MIS; Pulsed I–V
Impact of post-nitridation annealing on ultra-thin gate oxide performance
Keywords: نشت جریان دروازه; 52.77.Dq; 73.40.Qv; 85.40.âe; Plasma nitridation; Post-nitridation annealing; Gate leakage current; HCI; NBTI; TDDB;
Effect of gate insulating layer on organic static induction transistor characteristics
Keywords: نشت جریان دروازه; Organic static induction transistor; Vertical type transistor; Gate leakage current; Gate insulating layers;
The effects of hydroxyl-free polystyrene buffer layer on electrical performance of pentacene-based thin-film transistors with high-k oxide gate dielectric
Keywords: نشت جریان دروازه; Pentacene-based thin-film transistors; Polystyrene buffer layer; Field effect mobility; Hysteresis; Gate leakage current; HfO2
Method of extracting effective channel length for nano-scale n-MOSFETs
Keywords: نشت جریان دروازه; MOSFET; Effective channel length; Nano-scale MOSFET; Gate leakage current; Gate tunneling current
Temperature effect of metal–oxide–semiconductor field-effect-transistors’ gate current evaluated with the mask dimensions
Keywords: نشت جریان دروازه; Ultra-thin gate oxide; Direct tunneling current; Source–drain extension; Gate leakage current; Modeling; Edge direct tunneling (EDT)
Study of gate leakage current in symmetric double gate MOSFETs with high-κ/stacked dielectrics
Keywords: نشت جریان دروازه; Gate leakage current; Double gate MOSFETs; High-κ dielectric
Highly reliable high-k gate dielectrics with gradual Hf-profile in the HfO2/SiO2 interface region
Keywords: نشت جریان دروازه; High-k dielectrics; HfO2; SiO2; Gate leakage current; Time-to-breakdown;
An optimization technique for parameter extraction of ultra-deep submicron LDD MOSFET’s
Keywords: نشت جریان دروازه; Threshold voltage; Parameter extraction; Optimization; Gate leakage current; Lightly-doped-drain MOSFET
Quantum-mechanical effects and gate leakage current of nanoscale n-type FinFETs: A 2d simulation study
Keywords: نشت جریان دروازه; FinFET; Double-gate MOSFET; Quantum-mechanical effect; Gate leakage current; Numerical Simulation
Performance improvement of n-MOSFETs with constituent gradient HfO2/SiO2 interface
Keywords: نشت جریان دروازه; high-k dielectrics; HfO2; SiO2; gate leakage current; effective electron mobility;
Effects of plasma nitridation on ultra-thin gate oxide electrical and reliability characteristics
Keywords: نشت جریان دروازه; 52.75.R; 77.84.B; 73.40.G; 85.40.Q; Plasma nitrided oxide; Rapid thermal oxynitride oxide; Gate leakage current; SILC; NBTI; TDDB;
Selectively hydrogen-pretreated AlGaAs/InGaAs p-HEMTs and their application to an enhancement/depletion-mode HEMT
Keywords: نشت جریان دروازه; Selective hydrogen pretreatment; E/D-HEMT; Shallow traps; Gate leakage current;