کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1672152 | 1008929 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of gate insulating layer on organic static induction transistor characteristics
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of gate insulating layer on organic static induction transistor characteristics Effect of gate insulating layer on organic static induction transistor characteristics](/preview/png/1672152.png)
چکیده انگلیسی
Organic static induction transistors, which have relatively short vertical channels, are attractive devices for their low operating voltage and high operating speed. However, a gate voltage larger than the Schottky barrier potential usually leads to a large gate leakage current and thus poor device performance. To limit the gate leakage current, we considered adding insulating layers around the gate electrode. The oxidization of aluminum during a physical vapor deposition process was used to form insulating layers around the gate electrode. The results demonstrate that by appending gate insulating layers, gate leakage currents can be effectively reduced and device characteristics, especially the on/off ratio, can be improved.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 2, 30 November 2009, Pages 514-517
Journal: Thin Solid Films - Volume 518, Issue 2, 30 November 2009, Pages 514-517
نویسندگان
Fanghua Pu, Yasuyuki Watanabe, Hiroshi Yamauchi, Masakazu Nakamura, Kazuhiro Kudo,