کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9670492 | 1450403 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Performance improvement of n-MOSFETs with constituent gradient HfO2/SiO2 interface
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We investigated an influence of the constituent gradient interfacial layer (CG-IL) between HfO2 and SiO2 on the electrical characteristics of high-k MOSFETs. The CG-IL structure was successfully grown by the newly developed layer-by-layer deposition and annealing (LL-D & A) technique. The dielectric constant of the CG-IL was higher than that of SiO2-IL, because Hf atoms were diffused into the underlying SiO2 layer and Si-O-Hf bonds were formed. Furthermore, the CG-IL structure can significantly reduce the scattering center which is considered to exist at the HfO2/SiO2 interface, and thus improve the effective electron mobility. We consider that the CG-IL structure is useful to improve the electrical characteristics of n-MOSFETs with HfO2 films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 80, 17 June 2005, Pages 202-205
Journal: Microelectronic Engineering - Volume 80, 17 June 2005, Pages 202-205
نویسندگان
K. Iwamoto, A. Ogawa, T. Nabatame, H. Satake, A. Toriumi,