Keywords: مقاومت انگلی; Diode model; Norde plot; Ideality factor; Parasitic resistance; Turn-on voltage;
مقالات ISI مقاومت انگلی (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
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Keywords: مقاومت انگلی; Parasitic resistance; High-electron mobility transistor (HEMT); Floating-gate
Comprehensive separate extraction of parasitic resistances in MOSFETs considering the gate bias-dependence and the asymmetric overlap length
Keywords: مقاومت انگلی; MOSFET; Parasitic resistance; Gate bias; Overlap length; Source; Drain; Substrate; Intrinsic; Separate extraction;
Scalable α-power law based MOSFET model for characterization of ultra deep submicron digital integrated circuit design
Keywords: مقاومت انگلی; Scaling of MOSFET; Velocity overshoot; Mobility degradation; Parasitic resistance; DIBL high performance and low power digital Complementary Metal Oxide Semiconductor (CMOS) circuit design; Enz-Krummenacher-Vittoz (EKV) model; Moderate inversion;
Investigation and analysis of dual-k spacer with different materials and spacer lengths for nanowire-FET performance
Keywords: مقاومت انگلی; Dual-k spacer; Parasitic resistance; Parasitic capacitance; Intrinsic gate delay; Inverter; High-to-low propagation delay;
Impact of parasitic resistances on the electrical characteristics of a SiC MESFET
Keywords: مقاومت انگلی; Parasitic resistance; SiC-MESFET; Mutual conductance; Cut-off frequency;
Impact of residual defects caused by extension ion implantation in FinFETs on parasitic resistance and its fluctuation
Keywords: مقاومت انگلی; FinFET; Ion implantation; Parasitic resistance; Variability; Crystal defects;
Extraction of parasitic and channel resistance components in FinFETs using TCAD tools
Keywords: مقاومت انگلی; Parasitic resistance; FinFET
Influence of growth morphology on electrical and thermal modeling of AlGaN/GaN HEMT on sapphire and silicon
Keywords: مقاومت انگلی; AlGaN/GaN HEMT; Scattering; Mobility; Parasitic resistance; 2DEG; Thermal conductivity
An accurate closed-expression model for FinFETs parasitic resistance
Keywords: مقاومت انگلی; Parasitic resistance; FinFET; Device modeling
Enhancement of FinFET performance using 25-nm-thin sidewall spacer grown by atomic layer deposition
Keywords: مقاومت انگلی; FinFET; Sidewall spacer; Parasitic resistance; Atomic layer deposition;
Effective channel length and parasitic resistance determination in non self-aligned low temperature polycrystalline silicon thin film transistors
Keywords: مقاومت انگلی; Thin film transistor; Effective channel length; Non self-aligned process; Parasitic resistance
A study on aggressive proximity of embedded SiGe with comprehensive source drain extension engineering for 32 nm node high-performance pMOSFET technology
Keywords: مقاومت انگلی; MOSFET; Stress; Mobility; Parasitic resistance; SiGe; Strained-Si; 32-nm node
Impact of metal silicide layout covering source/drain diffusion region on minimization of parasitic resistance of triple-gate SOI MOSFET and proposal of practical design guideline
Keywords: مقاومت انگلی; SOI; Multiple-gate FET; Source and drain diffusion; Silicide; Parasitic resistance
Gate length scaling trends of drive current enhancement in CMOSFETs with dual stress overlayers and embedded-SiGe
Keywords: مقاومت انگلی; Strained Si; Parasitic resistance; Scaling; Stressed overlayer; SiGe; MOSFET;
Grain size effects on contact resistance of top-contact pentacene TFTs
Keywords: مقاومت انگلی; OTFTs; Shadow mask; Parasitic resistance; Grain boundary trap density; Activation energy
New method to extract the model parameters of solar cells from the explicit analytic solutions of their illuminated I–V characteristics
Keywords: مقاومت انگلی; Solar cell parameter extraction; Parasitic resistance; Parasitic shunt conductance; Lambert W function
Strained-silicon MOSFET process technology-control of impurity and germanium atoms at the hetero-interface
Keywords: مقاومت انگلی; Strained silicon; Mobility; Parasitic resistance; Impurity profile; Ion implantation;