کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5010220 | 1462201 | 2017 | 22 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Impact of residual defects caused by extension ion implantation in FinFETs on parasitic resistance and its fluctuation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
The influence of extension doping on parasitic resistance and its variability has been investigated for FinFETs. Electrical characterization of FinFETs and crystallinity evaluation of the doped fin structure are carried out for different fin thicknesses and different donor species for ion implantation, i.e., As and P. Reducing the fin thickness and the use of donor species with a larger mass cause serious degradation in the variability and median value of the parasitic resistance. Crystallinity evaluation by transmission electron microscope reveals that significant crystal defects remain after dopant activation annealing for the cases of smaller fin thickness and the implanted dopant with a larger mass. The unrecovered defects cause serious degradation in the parasitic resistance and its variability.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 132, June 2017, Pages 103-108
Journal: Solid-State Electronics - Volume 132, June 2017, Pages 103-108
نویسندگان
Takashi Matsukawa, Yongxun Liu, Takahiro Mori, Yukinori Morita, Shintaro Otsuka, Shin-ichi O'uchi, Hiroshi Fuketa, Shinji Migita, Meishoku Masahara,