Enhancement of FinFET performance using 25-nm-thin sidewall spacer grown by atomic layer deposition

► The ALD process using the TEOS precursor has been successfully implemented into the SWS formation of the FinFETs. ► The FinFETs with the 25-nm-short extension of the source/drain by using the ALD-SWS have been fabricated. ► The performance of the FinFETs has been successfully improved by the reduction of the parasitic resistance.