Comparative analysis of thermally induced degradation of condensation-grown (1Â 0Â 0)Ge0.75Si0.25/SiO2 interfaces by electron spin resonance
Keywords: Silicon-germanium-on-insulator (SGOI); Silicon germanium alloys; Electron spin resonance (ESR); Interface defects; Pb type centers; GePb1 defect; High mobility transistors; Thermal degradation;