Defect analysis of thin film Si-based alloys deposited by hot-wire CVD using junction capacitance methods

We evaluate and compare the electronic properties of hot-wire CVD deposited a-Si:H and a-Si,Ge:H films with those produced by the glow discharge (PECVD) method. A good indicator of film quality with respect to solar cell applications is the narrowness of the band tail widths determined by transient photocapacitance (TPC) spectroscopy. We focus on the excellent electronic properties of hot-wire CVD a-Si,Ge:H alloys that have recently been produced by a 1800  °C filament temperature process. These alloy samples were compared to a-Si,Ge:H films of the same optical gaps deposited by PECVD. Light-induced degradation was examined in a few samples and compared to the behavior PECVD a-Si,Ge:H alloys of similar optical gap. The effects of intentional oxygen contamination were also studied on a series of HWCVD a-Si,Ge:H samples containing 29at.% Ge.