کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10140115 | 1645991 | 2019 | 12 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Detailed characterization of good-quality SnS thin films obtained by chemical solution deposition at different reaction temperatures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
A process for the chemical deposition of good-quality SnS thin films is presented. This process consists of a careful substrate sensitization; the placement of the substrate in a particular angle in the reaction solution; and the use of an aqueous reaction solution composed of stannous chloride, ethanol, triethanolamine, thioacetamide, and ammonium hydroxide. This process enables the deposition of good-quality SnS thin films that are homogenous and strongly adhered to the substrate, even at a temperature of 70â¯Â°C. The effect of reaction temperature (40, 45, 50, 55, 60, 65, and 70â¯Â°C) on the properties of the SnS thin films was studied by means of X-ray diffraction (including a Rietveld analysis), scanning electron microscopy, X-ray photoelectron spectroscopy, optical spectroscopy, and current photo-response. Rietveld analysis shows the presence of two tin sulfide orthorhombic phases (α-SnS and β-SnS) and a platelet-like microstructure with less than 20% of the total volume oriented in the (111) plane. Surface morphology confirms that grains have platey-like habits. It is found that with increasing reaction temperature the thin films increase in thickness, become more crystalline, and the conductivity photo-response improves, making the prepared SnS thin films suitable for optoelectronic applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 89, January 2019, Pages 131-142
Journal: Materials Science in Semiconductor Processing - Volume 89, January 2019, Pages 131-142
نویسندگان
D. Cabrera-German, J.A. GarcÃa-Valenzuela, M. Cota-Leal, M. MartÃnez-Gil, R. Aceves, M. Sotelo-Lerma,