کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10142175 | 1646091 | 2019 | 32 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Study of the growth time effect on the structural, morphological and electrical characteristics of ZnO/p-Si heterojunction diodes grown by sol-gel assisted chemical bath deposition method
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
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چکیده انگلیسی
Well-aligned ZnO nanorods (NRs) have been synthesized by chemical bath deposition (CBD) method on (100) p-type Silicon substrate for various growth times. ZnO seed layers have been pre-coated on Si by sol-gel spin-coating process. The effect of growth time on structural, morphological and electrical properties of ZnO NRs were systematically investigated by X-Ray diffraction, scanning electron microscopy and current-voltage measurements at room temperature. SEM images illustrated that vertical, well-aligned, uniformly distributed, dense ZnO NRs were observed to grow on the Si substrate. Moreover, the growth rate decreases dramatically as the deposition time increased. X-ray diffraction pattern showed that the synthesized ZnO NRs have hexagonal wurtzite structure and exhibit a preferred orientation along the c-axis. The current-voltage analysis provided information about electrical parameters of n-ZnO NRs/p-Si heterojunction diode as a function of the growth time. The results showed an increase in the barrier height Ïb and a decrease in the ideality factor n, as the length of the NRs increased. More details about I-V characteristics measured under illumination and in the dark are also reported.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 771, 15 January 2019, Pages 448-455
Journal: Journal of Alloys and Compounds - Volume 771, 15 January 2019, Pages 448-455
نویسندگان
Wided Chebil, Anisha Gokarna, Afif Fouzri, Nejeh Hamdaoui, Komla Nomenyo, Gilles Lerondel,