کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10148008 | 1646512 | 2018 | 24 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Temperature-dependent electrical characteristics of Alq3/p-Si heterojunction
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Al/Alq3(organic materials)/p-Si device was fabricated by the use of spin coating technique, and it was investigated by using current-voltage measurement in a wide temperature range from 80 to 320â¯K with 20â¯K steps. Some device parameters such as ideality factor, barrier height and series resistance values were determined by the use of standard thermionic emission theory and Norde functions, and the values found were compared with other studies. It was seen that all parameters of fabricated device strongly depended on temperature changes. AFM and SEM images were taken for better understanding surface morphology, and addressed in detail. The results of experiments suggest that the fabricated device with Alq3 organic interfacial layer could be used effectively in the temperature-dependent device applications for developing electronic technology.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 550, 1 December 2018, Pages 68-74
Journal: Physica B: Condensed Matter - Volume 550, 1 December 2018, Pages 68-74
نویسندگان
Abdulkerim Karabulut, Ä°kram Orak, Serdal Canlı, Nezir Yıldırım, Abdulmecit Türüt,