کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10155969 | 1666369 | 2019 | 16 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Enhanced and wavelength-tunable near-infrared luminescence from bismuth-doped silica thin films with Au nanocrystals
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Near-infrared (NIR) luminescence origin of Bi-doped amorphous silica thin film is elucidated by the XPS characterizations and selective photoluminescence (PL) measurements. The excitation wavelength-dependent NIR luminescence suggests the co-existence of two different types of Bi-related active centers, Bi0 and Bi+, should contribute to the NIR PL emissions at 1150â¯nm and 1280â¯nm, respectively. A confined crystallization growth strategy is designed for fabricating the uniform-size Au nanocrystals (NCs) embedded in Bi-doped amorphous silica thin film. Via controls of the doping amounts of Au ions, the NIR PL emission of Bi ions in amorphous silica thin film can be wavelength-tunable and enhanced by nearly 300% on the optimum Au ions doping amount. Temperature-dependent PL emission spectra demonstrate parts of Au ions play a role of eliminating hydroxyl groups and give rise to greatly enhanced NIR PL emission intensity. We anticipate that both the greatly enhanced and wavelength-tunable PL emission and the discussion of NIR luminescence origin will shed light on future research of Bi-doped luminescent materials.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 772, 25 January 2019, Pages 332-336
Journal: Journal of Alloys and Compounds - Volume 772, 25 January 2019, Pages 332-336
نویسندگان
Xiaowei Zhang, Pengjun Wang, Dongfeng Qi, Yanyan Huang, Bolin Zheng, Tao Lin, Ping Chen, Zhongwei Yu, Jun Xu,