THz detectors based on Si-CMOS technology field effect transistors - advantages, limitations and perspectives for THz imaging and spectroscopy

THz detectors based on Si-CMOS technology field effect transistors - advantages, limitations and perspectives for THz imaging and spectroscopy

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Opto-Electronics Review - Volume 26, Issue 4, December 2018, Pages 261-269

J. Marczewski, D. Coquillat, W. Knap, C. Kolacinski, P. Kopyt, K. Kucharski, J. Lusakowski, D. Obrebski, D. Tomaszewski, D. Yavorskiy, P. Zagrajek, R. Ryniec, N. Palka,