کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10248711 | 49323 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Excellent surface passivation of heavily doped p+ silicon by low-temperature plasma-deposited SiOx/SiNy dielectric stacks with optimised antireflective performance for solar cell application
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The measured injection level dependence of the Auger-corrected inverse effective lifetime of symmetrical p+np+ samples symmetrically passivated by SiOx, SiOx/SiNy and SiNx films. For comparison, results obtained earlier for a similar sample symmetrically passivated by an AlOx/SiNx stack are also included [13]. The J0e values were obtained from fitting the data using Eq. (1). All layers were deposited by PECVD and the samples received a post-deposition anneal in an industrial firing furnace .
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 120, Part A, January 2014, Pages 204-208
Journal: Solar Energy Materials and Solar Cells - Volume 120, Part A, January 2014, Pages 204-208
نویسندگان
Shubham Duttagupta, Fa-Jun Ma, Bram Hoex, Armin G. Aberle,