کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10248744 | 49323 | 2014 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Non-linear absorption of femtosecond laser pulses in a SiNx layer-influence of silicon doping type
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Non-linear absorption of femtosecond laser pulses in a SiNx layer-influence of silicon doping type Non-linear absorption of femtosecond laser pulses in a SiNx layer-influence of silicon doping type](/preview/png/10248744.png)
چکیده انگلیسی
In this article, silicon nitride (SiNx) layers deposited on planar silicon wafers with two different doped areas (emitter: highly phosphorous doped and bulk: lightly boron doped) were locally irradiated by laser pulses. Our investigation is focused on the ablation mechanisms. For that purpose, an ultra-short laser source (pulse duration 0.3-12Â ps, wavelength 1025Â nm, Gaussian profile) was used. For high pulse durations and low fluences the SiNx layer is removed completely by lift-off. However, for lower pulse durations and higher fluences, the SiNx layer is not completely removed, due to direct ablation. By using an emitter, direct ablation of SiNx layers were observed also for higher pulse durations. Thus, the absorption process in the SiNx layer can be described as avalanche ionization with seed electrons from silicon.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 120, Part A, January 2014, Pages 317-322
Journal: Solar Energy Materials and Solar Cells - Volume 120, Part A, January 2014, Pages 317-322
نویسندگان
Gerrit Heinrich, Alexander Lawerenz,