کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10248788 | 49400 | 2005 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Improvement of electrical and optical properties of ZnO thin films prepared by MOCVD using UV light irradiation and in situ H2 post-treatment
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Improvement of electrical and optical properties of ZnO thin films prepared by MOCVD using UV light irradiation and in situ H2 post-treatment Improvement of electrical and optical properties of ZnO thin films prepared by MOCVD using UV light irradiation and in situ H2 post-treatment](/preview/png/10248788.png)
چکیده انگلیسی
We have investigated the effect of ultraviolet (UV) light irradiation during the deposition of nominally undoped ZnO thin films using metalorganic chemical vapor deposition (MOCVD) and/or in situ hydrogen post-treatment. Due to the desorption of oxygen and incorporation of hydrogen as a shallow donor at the surface, the ZnO film prepared by the photo-MOCVD and in situ hydrogen post-treatment shows the highest film quality as a transparent conductive electrode for thin-film solar cells.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 86, Issue 1, 15 February 2005, Pages 105-112
Journal: Solar Energy Materials and Solar Cells - Volume 86, Issue 1, 15 February 2005, Pages 105-112
نویسندگان
Seung Yeop Myong, Koeng Su Lim,