کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10248971 | 49427 | 2005 | 13 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Sputtered Cd1âxZnxTe films for top junctions in tandem solar cells
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
Cd1âxZnxTe alloy films with 1.6 and 1.7 eV band gaps were deposited by RF magnetron sputtering from targets made either of mixed powders or alloys of CdTe and ZnTe (25% and 40%). High-quality polycrystalline films with the (1 1 1) preferred orientation were obtained. The films were characterized using X-ray diffraction (XRD), scanning electron microscopy, resistivity, optical absorption, Raman, and photoluminescence. The EDS, XRD, and optical absorption analysis indicated that the x-value of the as-grown films were typically â¼0.20 and 0.30 for films sputtered from 25% and 40% ZnTe containing targets, respectively. The as-deposited alloy films exhibit quite low photovoltaic performance when used to make cells with CdS as the hetero-junction partner. Therefore, we have studied various post-deposition treatments with vapors of chlorine-containing materials, CdCl2 and ZnCl2, in dry air or H2/Ar ambient at â¼390 °C. The best performance of a Cd1âxZnxTe cell (VOC=737mV, JSC=19mA/cm2) was found for treatment with vapors of the mixed CdCl2+0.5%ZnCl2 in an H2/Ar ambient after pre-annealing at â¼520 °C in pure H2/Ar.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 86, Issue 4, 1 April 2005, Pages 551-563
Journal: Solar Energy Materials and Solar Cells - Volume 86, Issue 4, 1 April 2005, Pages 551-563
نویسندگان
Sung Hyun Lee, Akhlesh Gupta, ShanLi Wang, Alvin D. Compaan, Brian E. McCandless,