کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10248977 | 49427 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A new technique for boosting efficiency of silicon solar cells
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: A new technique for boosting efficiency of silicon solar cells A new technique for boosting efficiency of silicon solar cells](/preview/png/10248977.png)
چکیده انگلیسی
A new type of photovoltaic system with higher generation power density has been studied in detail. The feature of the system is a V-shaped module (VSM) with two tilted monocrystalline solar cells. Compared to solar cells in a flat orientation, the VSM enhances external quantum efficiency and leads to an increase of 31% in power conversion efficiency. Due to the VSM technique, short-circuit current density was raised from 24.94 to 33.7Â mA/cm2, but both fill factor and open-circuit voltage were approximately unchanged. For the VSM similar results (about 30% increase) were obtained for solar cells fabricated by using mono-crystalline silicon wafers with only conventional background impurities.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 86, Issue 4, 1 April 2005, Pages 585-591
Journal: Solar Energy Materials and Solar Cells - Volume 86, Issue 4, 1 April 2005, Pages 585-591
نویسندگان
Jianming Li, Ming Chong, Liqing Yang, Jiadong Xu, Xiao-Feng Duan, Min Gao, Feng-Lian Wang, Haitao Liu, Li Bian, Xun Chi, Yonghui Zhai,