کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10249211 | 49468 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Lowering of thickness of boron-doped microcrystalline hydrogenated silicon film by seeding technique
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Lowering of thickness of boron-doped microcrystalline hydrogenated silicon film by seeding technique Lowering of thickness of boron-doped microcrystalline hydrogenated silicon film by seeding technique](/preview/png/10249211.png)
چکیده انگلیسی
By using a seeding technique it has been possible to reduce the thickness of p-μc-Si:H film to 230 Ã
, with an improved electrical conductivity (0.93 S cmâ1) and lower optical absorption compared to those of conventional p-μc-Si:H layers without a seed layer, for use at the tunnel junction and as the top layer of a double junction n-i-p structured a-Si solar cell. Undoped-μc-Si:H has been used as the seed layer. The layers were prepared by the radio frequency plasma-enhanced chemical vapour deposition (RF-PECVD) method (13.56 MHz) at 40 mW/cm2 rf power density and low substrate temperature (200 °C). The ultrathin seed layer (â¼30 Ã
) enhances the growth of microcrystallinity of the p-type μc-Si:H film as confirmed by the results of transmission electron microscopy (TEM) analysis and Raman spectroscopy.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 86, Issue 3, 31 March 2005, Pages 365-371
Journal: Solar Energy Materials and Solar Cells - Volume 86, Issue 3, 31 March 2005, Pages 365-371
نویسندگان
Arindam Sarker, Chandan Banerjee, A.K. Barua,