کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10249226 | 49473 | 2005 | 13 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Comparative frequency-resolved photoconductivity studies of amorphous semiconductors
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Comparative frequency-resolved photoconductivity studies of amorphous semiconductors Comparative frequency-resolved photoconductivity studies of amorphous semiconductors](/preview/png/10249226.png)
چکیده انگلیسی
Comparative frequency-resolved photoconductivity measurements in amorphous (a-) semiconductors, such as a-Si:H p-i-n junction, a-SiGe:H and a-chalcogenides (a-Se, a-As2Se3, a-As2Te3, a-SeTe, a-As2S3, etc.) are reported. In particular, photoconductivity lifetimes as a function of light intensity and temperature were determined by using the quadrature frequency-resolved spectroscopy method. The activation energies from the temperature-dependent lifetime and photocurrent were determined and compared in different materials. The exponent ν in the power-law relationship (IphâGν) between generating flux and photocurrent was also obtained at different excitation wavelengths. The results were compared with the predictions of multiple-trapping (MT) and distant-pair (DP) models developed for photoconductivity of a-semiconductors at high and low temperatures, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 85, Issue 4, 1 February 2005, Pages 545-557
Journal: Solar Energy Materials and Solar Cells - Volume 85, Issue 4, 1 February 2005, Pages 545-557
نویسندگان
R. Kaplan,