کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10249227 49473 2005 14 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Spatially resolved investigations of lifetime enhancement in vertically grown, multicrystalline silicon ribbons
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی کاتالیزور
پیش نمایش صفحه اول مقاله
Spatially resolved investigations of lifetime enhancement in vertically grown, multicrystalline silicon ribbons
چکیده انگلیسی
This aspect of spatial resolution has been found to be indispensable for investigating the impact of different processing steps on material quality in an accurate way. Apart from strong variations in as-grown lifetimes that have been found throughout vertically grown silicon wafers, this is due to areas of comparable starting lifetimes which have been revealed to react very differently to applied processing steps. After processing, some of them reach minority charge carrier lifetimes of more than 300 μs whereas others just show values of a few microseconds. As a consequence, the results of integral measurements strongly depend on the nature of areas incorporated in the specific sample. An impression of the corresponding uncertainties inherent to integral measurements has been obtained by statistical evaluation of spatially resolved lifetime data.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 85, Issue 4, 1 February 2005, Pages 559-572
نویسندگان
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