کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10249260 | 49484 | 2005 | 12 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A comparative study of CuInSe2 and CuIn3Se5 films using transmission electron microscopy, optical absorption and Rutherford backscattering spectrometry
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: A comparative study of CuInSe2 and CuIn3Se5 films using transmission electron microscopy, optical absorption and Rutherford backscattering spectrometry A comparative study of CuInSe2 and CuIn3Se5 films using transmission electron microscopy, optical absorption and Rutherford backscattering spectrometry](/preview/png/10249260.png)
چکیده انگلیسی
CuInSe2 and CuIn3Se5 films were grown by stepwise flash evaporation onto glass and Si substrates held at different temperatures. Transmission electron microscopy (TEM) studies revealed that the films grown above 370 K were polycrystalline, with CuInSe2 films exhibiting larger average grain size than CuIn3Se5. Optical absorption studies yielded band gaps of 0.97±0.02 and 1.26±0.02 eV for CuInSe2 and CuIn3Se5, respectively. Rutherford backscattering spectrometry (RBS) study of the films on Si showed that CuInSe2/Si structures included an inhomogeneous interface region consisting of Cu and Si, whereas CuIn3Se5/Si structures presented sharp interface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 88, Issue 3, 15 August 2005, Pages 281-292
Journal: Solar Energy Materials and Solar Cells - Volume 88, Issue 3, 15 August 2005, Pages 281-292
نویسندگان
P. Malar, S. Kasiviswanathan,