کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10269411 | 459855 | 2005 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Tin oxide nanosensor fabrication using AC dielectrophoretic manipulation of nanobelts
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
مهندسی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Tin oxide nanosensor fabrication using AC dielectrophoretic manipulation of nanobelts Tin oxide nanosensor fabrication using AC dielectrophoretic manipulation of nanobelts](/preview/png/10269411.png)
چکیده انگلیسی
Nanobelts are a new class of semiconducting metal oxide nanowires. The ribbon-like nanobelts are chemically pure and structurally uniform single crystals, with clean, sharp, smooth surfaces, and rectangular cross-sections. Positive and negative dielectrophoresis (DEP) was demonstrated for the first time on semiconducting oxide nanobelts. This effect was then used for the fabrication of a nanodevice, which consisted of SnO2 nanobelts attached to castellated gold electrodes defined on a glass substrate, and covered by a microchannel. The SnO2 nanobelts (width â¼Â 100-300 nm, thickness â¼Â 30-40 nm) were suspended in ethanol and introduced into the microchannel. An alternating (AC) voltage of â¼9.8 V peak to peak, with variable frequency, was applied between the electrodes (minimum electrode gap â¼Â 20 μm), which corresponds to an average electric field strength of less than 2.5 Ã 105 V/m. In the 10 Hz-1 kHz range, repulsion between the nanobelts and the electrodes occurred, while in the 1-10 MHz range, attraction was observed. Once the nanobelts touched the electrodes, those that were sufficiently long bridged the electrode gaps. The device was characterized and can potentially be used as a nanosensor.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Electrochimica Acta - Volume 51, Issue 5, 10 November 2005, Pages 943-951
Journal: Electrochimica Acta - Volume 51, Issue 5, 10 November 2005, Pages 943-951
نویسندگان
Surajit Kumar, Swaminathan Rajaraman, Rosario A. Gerhardt, Zhong Lin Wang, Peter J. Hesketh,