کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10269767 | 459892 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrodeposition of CdTe thin films onto n-Si(1Â 0Â 0): nucleation and growth mechanisms
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
مهندسی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electrodeposition of CdTe thin films onto n-Si(1Â 0Â 0): nucleation and growth mechanisms Electrodeposition of CdTe thin films onto n-Si(1Â 0Â 0): nucleation and growth mechanisms](/preview/png/10269767.png)
چکیده انگلیسی
The mechanisms related to the initial stages of the nucleation and growth of cadmium telluride (CdTe) thin films on the rough face side of a (1Â 0Â 0) monocrystalline n-type silicon have been studied as a function of different potential steps that varied from an initial value of â0.200Â V to values comprised between â0.515 and â0.600Â V versus saturated calomel electrode (SCE). The analysis of the corresponding potentiostatic j/t transients suggests that the main phenomena involved at short times is the formation of a Te-Cd bi-layer (BL). For potentials below â0.540Â V, the formation of this bi-layer can be considered independent of potential. At greater times, the mechanisms is controlled by two process: (i) progressive nucleation three dimensional charge transfer controlled growth (PN-3D)ct and (ii) progressive nucleation three dimensional diffusion controlled growth (PN-3D)diff, both giving account for the formation of conical and hemispherical nuclei, respectively. Ex situ AFM images of the surface seem to support these assumptions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Electrochimica Acta - Volume 50, Issue 6, 30 January 2005, Pages 1299-1305
Journal: Electrochimica Acta - Volume 50, Issue 6, 30 January 2005, Pages 1299-1305
نویسندگان
H. Gómez, R. HenrÃquez, R. Schrebler, R. Córdova, D. RamÃrez, G. Riveros, E.A. Dalchiele,