کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10364173 | 871501 | 2005 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optical emission spectroscopy investigation on SiCOH films deposition using decamethylcyclopentasiloxane electron cyclotron resonance plasma
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Optical emission spectroscopy investigation on SiCOH films deposition using decamethylcyclopentasiloxane electron cyclotron resonance plasma Optical emission spectroscopy investigation on SiCOH films deposition using decamethylcyclopentasiloxane electron cyclotron resonance plasma](/preview/png/10364173.png)
چکیده انگلیسی
This paper investigates the characterization of decamethylcyclopentasiloxane electron cyclotron resonance plasma at different ECR position and field distribution, which were used as a precursor to deposit SiCOH low dielectric constant films. An ECR position threshold for microwave energy couple is found. Before this ECR position threshold, the radicals show an unsaturated distribution. However, a saturation radical distribution can be obtained after the position threshold. According to the radical distribution, the possible chemical reactions in ECR discharge plasma are presented and the relationship between SiCOH films structure and the radical distribution is analyzed. The results show that at a high ionization degree of DMCPS, the fivefold Si-O rings break and form new threefold Si-O rings. Meanwhile, more Si-OH groups break and form Si-O-Si linkages by a condensation chemistry occurring between proximal Si-OH groups. This helps to reduce the k value of SiCOH films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 82, Issue 1, September 2005, Pages 35-43
Journal: Microelectronic Engineering - Volume 82, Issue 1, September 2005, Pages 35-43
نویسندگان
Chao Ye, Zhaoyuan Ning, Yu Xin, Tingting Wang, Xiaozhu Yu, Meifu Jiang,