کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10364185 | 871506 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A study on Cu diffusion to sol-gel derived low-k films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
Organically modified low dielectric constant films were synthesized via sol-gel technique. The interaction between copper interconnect and sol-gel films with different porosity was investigated using Cu/low-k film/n+ Si metal insulator metal capacitors. Tape test showed that the copper adhered better to the films after annealing. The electrical properties of Cu/low-k film/n+ Si capacitors were characterized and compared to those of Au/Ti/low-k film/n+ Si capacitors. The dielectric constant and leakage current of the as-deposited and annealed Cu capacitors were found to be similar to those of the Au/Ti capacitors. The conduction mechanism analysis suggested that the carriers of both Cu capacitors and Au/Ti capacitors had the same Schottky emission. These results indicated that there was no significant Cu diffusion through the organosilicate films even for the film with porosity as high as 73% under the experimental conditions. The interface stability indicates that both adhesion promoting layer and diffusion barrier with higher dielectric constant perhaps can be avoided for these sol-gel derived low-k films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 77, Issue 1, January 2005, Pages 14-20
Journal: Microelectronic Engineering - Volume 77, Issue 1, January 2005, Pages 14-20
نویسندگان
Suzhu Yu, Terence K.S. Wong, Xiao Hu, Jun Wei,