کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10364794 | 871824 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
SOI planar photonic crystal fabrication: Etching through SiO2/Si/SiO2 layer systems using fluorocarbon plasmas
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: SOI planar photonic crystal fabrication: Etching through SiO2/Si/SiO2 layer systems using fluorocarbon plasmas SOI planar photonic crystal fabrication: Etching through SiO2/Si/SiO2 layer systems using fluorocarbon plasmas](/preview/png/10364794.png)
چکیده انگلیسی
Dry plasma etching of sub-micron structures in a SiO2/Si/SiO2 layer system using Cr as a mask was performed in a fluorocarbon plasma. It was determined that the best anisotropy could be achieved in the most electropositive plasma. A gas composition yielding the desired SOI planar photonic crystal structures was optimized from the available process gases, Ar, He, O2, SF6, CF4, c-C4F8, CHF3, using DC bias data sets. Application of the c-C4F8/(noble gas) chemistry allowed fabrication of the desired SOI planar photonic crystal. The average etching rates for the pores and ridge waveguide regions were about 71 and 97Â nm/min, respectively, while the average SiO2/Si/SiO2 to Cr etching selectivity for the ridge waveguide region was about 33:1 in case of the c-C4F8/90%Ar plasma with optimized parameters.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 81, Issue 1, July 2005, Pages 15-21
Journal: Microelectronic Engineering - Volume 81, Issue 1, July 2005, Pages 15-21
نویسندگان
A.P. Milenin, C. Jamois, T. Geppert, U. Gösele, R.B. Wehrspohn,