Patterned silicon-on-insulator technology for RF Power LDMOSFET

This paper presents the first results of a practical SOI LDMOSFET in patterned SOI substrate that has been successfully prepared by masked SIMOX method. The device exhibits good electrical performance including a leakage current of 20 nA, the flat output characteristic curves, a cutoff frequency up to 8 GHz, and a voltage gain of 2.5 dB at 2 GHz. The proposed technology not only suppresses floating body effects effectively but also preserves SOI technology's advantage of low power assumption. Moreover, the process is compatible with conventional SOI technology.