کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10406984 | 892819 | 2016 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Impact of thermal annealing on Ge-on-Insulator substrate fabricated by wafer bonding
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Impact of thermal annealing on Ge-on-Insulator substrate fabricated by wafer bonding Impact of thermal annealing on Ge-on-Insulator substrate fabricated by wafer bonding](/preview/png/10406984.png)
چکیده انگلیسی
We propose the Ge CMOS photonics platform with Ge-on-Insulator (GOI) substrate on which Ge mid-infrared photonic devices and Ge CMOS transistors can be monolithically integrated. The GOI wafer for the Ge CMOS photonics was fabricated by combining wafer bonding and H ion cut technologies. We studied the effect of thermal annealing on the GOI substrate in terms of crystal quality, surface morphology and electrical property. From Raman spectrum, it was found that the crystal quality of the Ge layer was significantly recovered after a 550 °C annealing in N2 (or O2) ambient for 1 h. Meanwhile, the surface roughness of the GOI substrate remained very low even after the annealing process. As a result, the significant improvements on electrical properties of the GOI substrate were confirmed by Hall measurement results. The carrier density of a GOI Hall device decreases from 2.9Ã1016 to 8.9Ã1015 cmâ3 and hole mobility increases from 925 to 2295 cm2/V s. These results strongly suggest the necessity of a proper thermal annealing on improving the GOI qualities.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 42, Part 2, February 2016, Pages 259-263
Journal: Materials Science in Semiconductor Processing - Volume 42, Part 2, February 2016, Pages 259-263
نویسندگان
J. Kang, X. Yu, M. Takenaka, S. Takagi,