کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10406986 | 892819 | 2016 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A new 4H-SiC hydrogen sensor with oxide ramp termination
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: A new 4H-SiC hydrogen sensor with oxide ramp termination A new 4H-SiC hydrogen sensor with oxide ramp termination](/preview/png/10406986.png)
چکیده انگلیسی
A Pd/SiO2/4H-SiC MOS capacitor with oxide ramp termination has been fabricated and its utilization for hydrogen (H2) sensing is reported. The grown oxide and oxide-semiconductor interface properties investigation by electrical measurements on test capacitors gave an electron tunneling barrier (Φb=2.62 eV) very close to the theoretical one (Φb=2.7 eV). This large electron tunneling barrier shows good oxide insulating properties. The density of interface states (Dit) has a relatively low value for a 31 nm thick oxide, with no post-oxidation annealing. The gas sensing capabilities of the SiC-MOS capacitor were tested at elevated temperatures, for different H2 concentrations. The sensor response increased with temperature, the maximum sensitivity (80%) being reached at 450 K. The flat band voltage (VFB) is left shifted up to 1.51 V at 20 ppm H2 concentration, showing sensitivity at low gas concentrations. The response/recovery times of about 5 to 6 s, respectively, were measured at 10,000 ppm hydrogen in nitrogen. These results recommend this capacitor structure for H2 detection.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 42, Part 2, February 2016, Pages 268-272
Journal: Materials Science in Semiconductor Processing - Volume 42, Part 2, February 2016, Pages 268-272
نویسندگان
Razvan Pascu, Mihaela Kusko, Florea Craciunoiu, Gheorghe Pristavu, Gheorghe Brezeanu, Marian Badila, Viorel Avramescu,