کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10407016 892830 2013 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
First-principles calculations of structural, electronic and optical properties of BaGaXH (X=Si, Ge, Sn)
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
First-principles calculations of structural, electronic and optical properties of BaGaXH (X=Si, Ge, Sn)
چکیده انگلیسی
The structural, elastic, electronic and optical properties of the gallium monohydrides BaGaXH (X=Si, Ge, Sn) have been investigated by means of first principles calculations. The low values of the B/G ratio of these compounds correspond to the brittle nature, which is due to the hydrogen presence. The bulk modulus, Young's modulus, shear modulus decrease from Si to Sn for BaGaXH (X=Si, Ge, Sn) in the same column in the periodic table. Also the Debye temperature of these compounds has a relative high θD value indicating that they possess good thermal conductivity. The mean sound velocities have a progressive decrease from silicon (Si) to tin (Sn).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 16, Issue 6, December 2013, Pages 1558-1565
نویسندگان
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