کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10407026 | 892830 | 2013 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Density functional and tight binding theories of electronic properties of II-VI heterostructures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Density functional and tight binding theories of electronic properties of II-VI heterostructures Density functional and tight binding theories of electronic properties of II-VI heterostructures](/preview/png/10407026.png)
چکیده انگلیسی
We present comparative calculations of the electronic structure of Cd and Zn based group II-VI compounds and their heterostructures based on the density functional and tight binding theories. The first principles density functional theory (DFT) uses the modified Becke-Johnson exchange potential with LDA correlation potential (MBJLDA) and the semi-empirical tight binding theory uses the first nearest neighbor (NN) sp3d5 and second nearest neighbor (2NN) sp3sâ basis with spin-orbit coupling of II cation (Cd, Zn) and VI anion (S, Se, Te) atoms for calculating the electronic structure of Cd and Zn based II-VI compounds and their heterostructures. The results of DFT with MBJLDA functional and NN sp3d5 and 2NN sp3sâ TB models are found to be in excellent agreement with measured band gaps of CdX and ZnX (X=S, Se, Te) based group II-VI compounds and their CdZnS/CdS, CdSTe/CdTe and ZnSSe/ZnSe heterostructures. We conclude that the NN sp3d5 TB model gives much more physical insight than the (2NN) sp3sâ TB model, making use of the fictitious s* state unnecessary.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 16, Issue 6, December 2013, Pages 1619-1628
Journal: Materials Science in Semiconductor Processing - Volume 16, Issue 6, December 2013, Pages 1619-1628
نویسندگان
H. Hakan Gürel, Hilmi Ãnlü,