Pulse electrodeposited copper indium sulpho selenide films and their properties

Copper indium sulpho selenide films of different composition were deposited by the pulse plating technique at 50% duty cycle (15 s ON and 15 s OFF). X-ray diffraction studies indicated the formation of single phase chalcopyrite copper indium sulpho selenide films. Transmission Electron Microscope studies indicated that the grain size increased from 10 nm-40 nm as the selenium content increased. The band gap of the films was in the range of 0.95 eV-1.44 eV. Room temperature resistivity of the films is in the range of 16.0 Ω cm-33.0 Ω cm. Films of different composition used in photoelectrochemical cells have exhibited photo output. Films of composition, CuInS0.9Se0.1 have exhibited maximum output, a VOC of 0.74 V, JSC of 18.50 mA cm−2, ff of 0.75 and efficiency of 11.40% for 60 mW cm−2 illumination.