کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10407039 892830 2013 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Enhanced output power of (indium) gallium nitride light emitting diodes by a transparent current spreading-film composed of a disordered network of indium tin oxide nanorods
ترجمه فارسی عنوان
قدرت خروجی دیود نوری دی اکسید گالیم (اندیس) افزایش یافته توسط یک فیلم پرتوی جریان شفاف که از شبکه ناسازگار نانوسایلهای اکسید قلع است
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
چکیده انگلیسی
A thin film consisting of a disordered nanorod network of indium tin oxide (ITO) and conventional ITO films are fabricated on gallium nitride (GaN) based-light emitting diodes (LEDs) by electron beam evaporation. The surface morphologies are observed by scanning electron microscopy (SEM). The disordered nanorod network of ITO is grown in vacuum without oxygen. It can be applied directly on the LED as the current spreading film unlike other nanorods which require growth on a conductive layer. The transmittance, current-voltage characteristic, and the dependence of light output power on current are measured for disordered nanorod network ITO LEDs and conventional ITO LEDs, respectively. The measurement results indicate that the nanorod network provides a significant improvement in the light output power of GaN-based LEDs. The influence of the structure of ITO films on the light output power of GaN-based LEDs is discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 16, Issue 6, December 2013, Pages 1719-1722
نویسندگان
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