Structural and photoelectrical characteristics of Si/6H-SiC heterojunctions prepared by hot-wall chemical vapor deposition

Based on a potential application for the Si/SiC heterojunction to realize light control of SiC devices, structures and electrical properties of boron-doped silicon layer deposited on the n-type 6H-SiC substrate by hot-wall chemical vapor deposition were investigated in this paper.X-ray diffraction analysis and scanning electronic microscopy were used to characterize the crystal structure and morphology of the deposited silicon layer. Results of I-V and C-V measurements indicated that the heterojunction was abrupt manifesting obvious p-n junction properties. During the I-V measurement, the Si/SiC heterojunction developed a remarkable photovoltaic effect under illumination condition.