کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10407059 892830 2013 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Formation of silicon nanocrystals by thermal annealing of low-pressure chemical-vapor deposited amorphous SiNx (x=0.16) thin films
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Formation of silicon nanocrystals by thermal annealing of low-pressure chemical-vapor deposited amorphous SiNx (x=0.16) thin films
چکیده انگلیسی
Silicon nanocrystals have been produced by thermal annealing of SiNx thin film obtained by low pressure chemical vapor deposition using a mixture between disilane and ammonia. Morphological, structural, and photoluminescence properties of the thin film were investigated using X-ray diffraction, scanning electron microscopy, Raman spectroscopy and photoluminescence spectroscopy. The results revealed a high crystallinity of film with a crystalline volume fraction exceeded 70%, and a dominance of silicon nanocrystallites having the sizes within the range 2.5-5 nm and density ~1.98.1012/cm2. The PL peaks consist of nanocrystalline silicon and amorphous silicon. The luminescence from the silicon nanocrystals was dominant.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 16, Issue 6, December 2013, Pages 1849-1852
نویسندگان
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